H Ofuchi et al 2009 J. Phys.: Conf. Ser. 190 012116 doi:10.1088/1742-6596/190/1/012116
H Ofuchi1, S Toyoda2,3,4, K Ikeda5, G L Liu5, Z Liu5 and M Oshima2,3,4
Show affiliationsGeometric structures for HfSiON/SiON/Si films annealed at various N2 gas partial pressures were investigated using fluorescence XAFS measurement at Hf LIII- and LI-edge. The XAFS analysis has revealed that the local structures around the Hf atoms strongly depend on the N2 gas partial pressure. For the sample annealed at the N2 gas partial pressure of 10 Torr HfN and HfSiON coexist, and for the samples annealed at the N2 gas partial pressure above 100 Torr Hf atoms form HfSiON only. These results indicate that the formation of HfN for HfSiON/SiON/Si films can be suppressed by annealing at proper partial pressure of N2 gas.
78.70.Dm X-ray absorption spectra
77.22.Ch Permittivity (dielectric function)
Condensed matter: electrical, magnetic and optical
Issue 1 (2009)
H Ofuchi et al 2009 J. Phys.: Conf. Ser. 190 012116
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