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Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

H Ofuchi1, S Toyoda2,3,4, K Ikeda5, G L Liu5, Z Liu5 and M Oshima2,3,4

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Geometric structures for HfSiON/SiON/Si films annealed at various N2 gas partial pressures were investigated using fluorescence XAFS measurement at Hf LIII- and LI-edge. The XAFS analysis has revealed that the local structures around the Hf atoms strongly depend on the N2 gas partial pressure. For the sample annealed at the N2 gas partial pressure of 10 Torr HfN and HfSiON coexist, and for the samples annealed at the N2 gas partial pressure above 100 Torr Hf atoms form HfSiON only. These results indicate that the formation of HfN for HfSiON/SiON/Si films can be suppressed by annealing at proper partial pressure of N2 gas.


PACS

78.70.Dm X-ray absorption spectra

77.22.Ch Permittivity (dielectric function)

68.55.-a Thin film structure and morphology

81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

77.55.+f Dielectric thin films

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (2009)



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