D Lützenkirchen-Hecht et al 2009 J. Phys.: Conf. Ser. 190 012114 doi:10.1088/1742-6596/190/1/012114
D Lützenkirchen-Hecht, C Markert, R Wagner and R Frahm
Show affiliationsReflection mode grazing incidence X-ray absorption spectroscopy at the Bi L3-edge and simultaneous electrical resistivity measurements were used to investigate the microstructure of quench condensed thin Bi metal films on float-glass substrates at temperatures from 20 K to 300 K. While thin films of ≈ 6 nm thickness appear to be amorphous after deposition at 20 K, thicker films of about 18 nm show the well-known rhombohedral structure of bulk Bi. During a subsequent heat treatment, the amorphous structure of the thin films transforms irreversibly into the crystalline form for temperatures at (42 ± 2) K. This crystallisation is accompanied by an irreversible increase of the film resistivity by a factor of more than 2.7. The film density and roughness do not change within detection limits during the heat treatment.
78.70.Dm X-ray absorption spectra
61.43.Dq Amorphous semiconductors, metals, and alloys
81.40.Gh Other heat and thermomechanical treatments
Condensed matter: electrical, magnetic and optical
Issue 1 (2009)
D Lützenkirchen-Hecht et al 2009 J. Phys.: Conf. Ser. 190 012114
J D Moore et al 2009 Supercond. Sci. Technol. 22 125023
H Yamada et al 2009 J. Phys.: Conf. Ser. 190 012069
M M Alam et al 2009 J. Phys. D: Appl. Phys. 42 225307
Matthew A McCune et al 2008 J. Phys. B: At. Mol. Opt. Phys. 41 201003
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J R Smith (for the LIGO Scientific Collaboration) 2009 Class. Quantum Grav. 26 114013
E Ben-Naim and P L Krapivsky 2009 J. Phys. A: Math. Theor. 42 475001
S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001
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