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Co-doped rutile TiO2-δ thin films studied by XANES and first principles calculations

Qinghua Liu, Yong Jiang, Wensheng Yan, Zhihu Sun, Zhiyun Pan, Tao Yao, Ziyu Wu and Shiqiang Wei

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The x-ray absorption near-edge structure (XANES) and first-principles calculations were employed to study the local structure and magnetic origin of Co-doped rutile TiO2 thin film. It is found that the experimental Co K-edge XANES can be reproduced by the calculated spectrum of substitutional Co (CoTi) with O vacancy (VO), suggesting the coexistence of CoTi and VO in this system. First-principles total energy calculations further reveal that the O vacancy prefers to reside near the Co ion and substantially facilitates the impurity doping. The electronic structure analysis indicates that the O vacancy can mediate the ferromagnetic interaction between the CoTi ions and thus is responsible for the observed room-temperature ferromagnetism in the Co-doped TiO2-δ thin films.


PACS

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

71.20.Nr Semiconductor compounds

61.72.J- Point defects and defect clusters

71.15.Mb Density functional theory, local density approximation, gradient and other corrections

75.50.Pp Magnetic semiconductors

78.70.Dm X-ray absorption spectra

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (2009)



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