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Growth temperature dependence on local structures of Fe0.05Si0.95 diluted magnetic semiconductors studied by X-ray absorption near-edge structure

Yong Jiang1,3, Qinghua Liu1, Tao Yao1, Jian Ye1, Qinghua Jiang1, H Oyanagi2 and Shiqiang Wei1,3

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X-ray absorption near-edge structure (XANES) spectroscopy was used to investigate the local structures of Fe0.05Si0.95 diluted magnetic semiconductors (DMSs) thin film deposited by radio-frequency (RF) reactive magnetron co-sputtering device at temperatures of room-temperature (RT), 473K and 573K. Using the ab inito self-consistent real-space multiple-scattering approach, the experimental XANES spectra can be well reproduced by the theoretical calculation curves. The results indicate that the majority of Fe atoms are located at Si substitutional sites FeSi in Fe0.05Si0.95 at the room temperature. Upon increasing the temperature to 473 and 573 K, the majority of Fe atoms tend to form the FeSi2 compound.


PACS

78.70.Dm X-ray absorption spectra

68.55.A- Nucleation and growth

75.50.Pp Magnetic semiconductors

75.70.Ak Magnetic properties of monolayers and thin films

75.50.Dd Nonmetallic ferromagnetic materials

81.15.Cd Deposition by sputtering

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 1 (2009)



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