Jian Ye et al 2009 J. Phys.: Conf. Ser. 190 012105 doi:10.1088/1742-6596/190/1/012105
Jian Ye1, Yong Jiang1, Qinghua Liu1, Tao Yao1, Zhiyun Pan1, Zhihu Sun1, Wensheng Yan1, Hiroyuki Oyanagi2 and Shiqiang Wei1
Show affiliationsThe local structure of the doped Mn in the MnxSi1-x dilute magnetic semiconductors (DMSs) fabricated by magnetron cosputtering method are studied by fluorescence X-ray absorption fine structure (XAFS) at Mn K-edge. It is found that the occupation of Mn atoms in the MnxSi1-x DMS strongly depends on the Mn content. The Mn K-edge XAFS results indicate that for the sample with low Mn content (x = 0.03~0.08), the Mn atoms are incorporated into the lattice of Si, and substitute part of the Si sites. As the Mn content reaches 0.15, Mn atoms mainly form the phase of Mn1Si1 compound.
78.70.Dm X-ray absorption spectra
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 1 (2009)
Jian Ye et al 2009 J. Phys.: Conf. Ser. 190 012105
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