Jian Ye et al 2009 J. Phys.: Conf. Ser. 190 012104 doi:10.1088/1742-6596/190/1/012104
Jian Ye1, Yong Jiang, Qinghua Liu, Yu Sun, Zhiyun Pan and Shiqiang Wei1
Show affiliationsFluorescence X-ray absorption fine structure (XAFS) technique was used to investigate the local structures of the doped Mn in the MnxGe1-x dilute magnetic semiconductors (DMSs) with different Mn content (x=0.07, 0.25, 0.36) prepared by magnetron cosputtering method. The results indicate that for the sample with low Mn content (x=0.07), the Mn atoms are mainly incorporated into the lattice of Ge, and locate at the substitutional sites of Ge atoms with the ratio of 75%. With the Mn content increasing to 0.25 or higher, only part of Mn atoms enter the lattice of Ge and the others exist in the form of the Mn5Ge3 phase whose content increases with the doped Mn concentration. It is found that, in the Mn0.07Ge0.93 the bond length of the first (Mn-Ge) shell is RMn-Ge = 2.50 Å, which is bigger than the first (Ge-Ge) shell distance in Ge by about 0.05 Å. These results imply that local structure expansion is induced by dilute Mn substituting into Ge sites.
78.70.Dm X-ray absorption spectra
75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
Issue 1 (2009)
Jian Ye et al 2009 J. Phys.: Conf. Ser. 190 012104
K Vijayanandhini et al 2009 J. Phys.: Condens. Matter 21 486002
Pier Lorenzo Solari et al 2009 J. Phys.: Conf. Ser. 190 012042
Dehui Xu et al 2009 J. Micromech. Microeng. 19 125003
R G Novikov 2009 Inverse Problems 25 115010
Mohammad H Maneshian et al 2009 Nanotechnology 20 495703
Bin Jiang et al J. Stat. Mech. (2008) P07008
Lan Hai-Ping and Zhang Shuang 2009 Chinese Phys. Lett. 26 117303
Tran Le et al 2009 Chinese Phys. Lett. 26 116801
Debdutta Lahiri et al 2009 J. Phys.: Conf. Ser. 190 012099