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Fluorescence XAFS analysis of local structures in iodine-doped Zn1-xCrxTe

H Ofuchi1, K Ishikawa2, K Zhang2, S Kuroda2, M Mitome3 and Y Bando3

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Geometric structures for II-VI diluted magnetic semiconductor iodine-doped Zn1-xCrxTe films (x = 0.05) grown by molecular-beam epitaxy with high-temperature ferromagnetism were investigated by using fluorescence x-ray absorption fine structure (XAFS) measurement in order to elucidate the relationship between the geometric structure and the magnetic properties. The XAFS analysis has revealed that the local structures around Cr atoms are dependent on the growth temperature. For the samples grown at 360 and 390 °C, the majority of Cr atoms are tetrahedrally coordinated to Te atoms, indicating the formation of substitutional Cr on Zn-site in ZnTe lattice and/or zinc-blende (ZB) CrTe. On the contrary, for the samples grown at 300 and 330 °C the additional formation of secondary phases such as Cr-Te compounds was suggested. Therefore, it is deduced that the formation of secondary phase such as Cr-Te compounds are related to the increase of Curie temperature. The XAFS analysis has also revealed that the local structures do not depend on the I concentration. For the samples with different I concentrations, the Cr atoms form substitutional Cr on Zn-site in ZnTe lattice and/or ZB CrTe, corresponding to the result of TEM measurement.


PACS

78.70.Dm X-ray absorption spectra

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

75.50.Pp Magnetic semiconductors

75.30.Kz Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.)

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

75.70.Ak Magnetic properties of monolayers and thin films

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 1 (2009)



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