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Local environment of Mn in Mn delta-doped Si layers

Q F Xiao1, S Kahwaji2, T L Monchesky2, R A Gordon1 and E D Crozier1

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Dilute magnetic semiconductors combine both magnetic ordering and semiconducting behaviour, leading to potential spintronic applications. Silicon containing dilute Mn impurities is a potential dilute magnetic semiconductor. We have grown Mn delta-doped films by deposition of 0.7 of a monolayer of Mn on Si(001) by molecular beam epitaxy and capping the film with Si. The magnetic properties are likely sensitive to the distribution of Mn on substitutional or interstitial sites and the formation of metallic precipitates. We have used polarization-dependent XAFS to examine the local structure. We compare to a thicker MnSi film grown on Si(111) and also examine the influence of lead on the manganese environment when used as a surfactant in the growth process.


PACS

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

75.70.Ak Magnetic properties of monolayers and thin films

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

75.50.Pp Magnetic semiconductors

78.70.Dm X-ray absorption spectra

61.72.J- Point defects and defect clusters

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (2009)



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