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Origin of oxygen vacancies in resistive switching memory devices

B P Andreasson1, M Janousch1, U Staub1, G I Meijer2, A Ramar3,4, J Krbanjevic3 and R Schaeublin3

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  1. Origin of oxygen vacancies in resistive switching memory devices

    B P Andreasson et al 2009 J. Phys.: Conf. Ser. 190 012074

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    Selemon Bekele (for the STAR Collaboration) 2004 J. Phys. G: Nucl. Part. Phys. 30 S229

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    Wei-guo Feng et al 1990 J. Phys.: Condens. Matter 2 5729

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    T Padmanabhan 2004 Class. Quantum Grav. 21 L1

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