B P Andreasson et al 2009 J. Phys.: Conf. Ser. 190 012074 doi:10.1088/1742-6596/190/1/012074
B P Andreasson1, M Janousch1, U Staub1, G I Meijer2, A Ramar3,4, J Krbanjevic3 and R Schaeublin3
Show affiliationsThe resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode.
77.84.Dy Niobates, titanates, tantalates, PZT ceramics, etc.
78.70.En X-ray emission spectra and fluorescence
85.50.Gk Non-volatile ferroelectric memories
Issue 1 (2009)
B P Andreasson et al 2009 J. Phys.: Conf. Ser. 190 012074
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