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Origin of oxygen vacancies in resistive switching memory devices

B P Andreasson1, M Janousch1, U Staub1, G I Meijer2, A Ramar3,4, J Krbanjevic3 and R Schaeublin3

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The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode.


PACS

77.84.Dy Niobates, titanates, tantalates, PZT ceramics, etc.

78.70.En X-ray emission spectra and fluorescence

85.50.Gk Non-volatile ferroelectric memories

72.80.Sk Insulators

61.72.J- Point defects and defect clusters

77.22.Jp Dielectric breakdown and space-charge effects

Subjects

Electronics and devices

Condensed matter: electrical, magnetic and optical

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (2009)



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