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Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent

H Yamada1, M Tabuchi2, Y Takeda1 and H Udono3

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Ito M, Nagai H, Katsuyama S and Majima K 2001 J. Alloys Compd. 315 251
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Chen Y H, Zhao B X, Lu F Y, Müller E and Mrotzek A 2003 J. Appl. Phys. 94 6621
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Wang F J, Saitou S, Ji Y S and Isshiki M 2006 J.Crystal Growth 295 129-132
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Udono H and Kikuma I 2004 Thin Solid Films 461 188-192
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Udono H and Kikuma I 2001 Japan. J. Appl. Phys. 40 1367-1369
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Nordheim L 1931 Ann. Phys. 9 607
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