Journal of Physics: Conference Series
Volume 190
Number 1
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M Katsikini et al 2009 J. Phys.: Conf. Ser. 190 012065 doi:10.1088/1742-6596/190/1/012065
N – K edge NEXAFS study of the defects induced by indium implantation in GaN
M Katsikini1, F Pinakidou1, E C Paloura1, E Wendler2, W Wesch2 and R Manzke3
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N – K edge NEXAFS study of the defects induced by indium implantation in GaN
M Katsikini et al 2009 J. Phys.: Conf. Ser. 190 012065
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