M Katsikini et al 2009 J. Phys.: Conf. Ser. 190 012065 doi:10.1088/1742-6596/190/1/012065
M Katsikini1, F Pinakidou1, E C Paloura1, E Wendler2, W Wesch2 and R Manzke3
Show affiliationsN – K edge near edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied in order to determine implantation-induced changes in the electronic structure of GaN. The samples were implanted with 700 keV In ions and fluencies in the range 5×1013 – 1 × 1016 ions/cm2. The NEXAFS results are discussed in combination with Rutherford backscattering (RBS) characterization which assesses the implantation induced damage. The main implantation effects on the NEXAFS spectra are: (a) a fluence-dependent broadening of the NEXAFS peaks, (b) emergence of a pre-edge shoulder (RL1) that is attributed to N split-interstitials and (c) appearance of a post-edge sharp peak (RL2) that is attributed to molecular N2 trapped in the GaN matrix. The RL2 is characterized by fine structure due to vibronic transitions that result from a change of the vibrational quantum number along with the electronic transition. The concentration of the interstitials and the N2 molecules as well as the width of the NEXAFS peaks, have a sigmoidal dependence on the logarithm of the ion fluence, following the behaviour of the defect concentration deduced from the RBS measurements.
61.72.uj III–V and II–VI semiconductors
71.20.Nr Semiconductor compounds
Issue 1 (2009)
M Katsikini et al 2009 J. Phys.: Conf. Ser. 190 012065
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