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Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

Shao-Wei Wang1, Jianrong Yang2, Yifang Chen, Honglou Zhen1, Xiaoshuang Chen1 and Wei Lu1

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High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.


PACS

81.16.Nd Nanolithography

07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

81.07.Bc Nanocrystalline materials

85.60.Gz Photodetectors (including infrared and CCD detectors)

73.23.Ad Ballistic transport

42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Subjects

Electronics and devices

Instrumentation and measurement

Surfaces, interfaces and thin films

Optics, quantum optics and lasers

Nanoscale science and low-D systems

Dates

Issue 1 (2009)



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