Shao-Wei Wang et al 2009 J. Phys.: Conf. Ser. 188 012023 doi:10.1088/1742-6596/188/1/012023
Shao-Wei Wang1, Jianrong Yang2, Yifang Chen, Honglou Zhen1, Xiaoshuang Chen1 and Wei Lu1
Show affiliationsHigh-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.07.Bc Nanocrystalline materials
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
Instrumentation and measurement
Surfaces, interfaces and thin films
Issue 1 (2009)
Shao-Wei Wang et al 2009 J. Phys.: Conf. Ser. 188 012023
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