Shufang Wang et al 2009 J. Phys.: Conf. Ser. 188 012017 doi:10.1088/1742-6596/188/1/012017
Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering
Shufang Wang1,2, Xifeng Li1 and Jianhua Zhang1
Show affiliationsGallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of RRMS measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 °C. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ω
cm at 350 °C. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1s-1.
- PACS
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
- Subjects
- Dates
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Issue 1 (2009)
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Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering
Shufang Wang et al 2009 J. Phys.: Conf. Ser. 188 012017
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