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The 8th China International NanoScience and Technology Symposium

Hailin Cong



PREFACE

The 8th China International NanoScience and Technology Symposium, Xiangtan (2009) – Nano-products Exposition, sponsored by Chinese Society of Miro-nanoTechnology and IEEE Nanotechnology Council, etc will be held on 23–27 October 2009 in Xiangtan, China. This symposium is held in order to promote the technology for the development of micro- and nano-scale, cross-scale integration, to share new micro/nano technologies, to exchange information and knowledge over all fields and promote the industrialization and development of nanotechnology. This is a leading professional and traditional conference with at least 400 participants every year. Famous experts, professors and government officials at home and abroad will give lectures during the symposium, which provides a good platform for delegates to discover the latest developments and dynamics of nanotechnology. Researchers, teachers and students in colleges, and technical personnel in the industrial community are welcome to contribute and actively participate in the symposium.

In our last symposium held in 2008, over 600 participants from all over the world attended, and we received over 570 abstract and paper submissions for the proceedings published in different languages in famous professional journals. And this year, we have already received over 400 submissions. After strict peer review, 60 of them are published in this volume of Journal of Physics: Conference Series. We are confident that the event will be even more successful this year. Consequently, the organizing committee and proceedings editorial committee would like to thank our colleagues at the IOP Publishing, the invited speakers, our sponsors and all the delegates for their great contributions in this conference.

Hailin Cong
Vice Chair of the proceedings editorial committee


Dates

Issue 1 (2009)



  1. The 8th China International NanoScience and Technology Symposium

    Hailin Cong 2009 J. Phys.: Conf. Ser. 188 011001

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  10. An approximate formula for the capacitance–void fraction relationship for annular flows

    Sin Kim et al 2009 Meas. Sci. Technol. 20 125404

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