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Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe

M Nagase, H Hibino, H Kageshima and H Yamaguchi

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We report the first measurement of spatially resolved in-plane conductance of few-layer (one- or two-layer) graphene grown on a SiC substrate, measured using an integrated nanogap probe. The morphology and number of layers of the thermally grown graphene were confirmed by in-situ observation using low energy electron microscopy (LEEM). The gap current (conductance) images were measured using an integrated nanogap probe with a 30-nm-gap on a conventional SPM system in vacuum. Island shapes with a typical width of 30 nm were clearly observed in the conductance image. Single- and double-layer graphene islands could be clearly distinguished, because the conductance of double-layer graphene is about four times that of single-layer graphene. The layer number of few-layer graphene has been successfully estimated from the electrical transport measurement using the integrated nanogap probe.


PACS

73.63.-b Electronic transport in nanoscale materials and structures

68.37.Nq Low energy electron microscopy (LEEM)

Subjects

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 5 (2008)



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