Song Jiuxu et al 2011 J. Semicond. 32 042003 doi:10.1088/1674-4926/32/4/042003
Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction
Song Jiuxu (宋久旭)1,2, Yang Yintang (杨银堂)1, Liu Hongxia (刘红霞)1 and Guo Lixin (郭立新)3
Show affiliationsSEMICONDUCTOR PHYSICS
Using the method combined non-equilibrium Green's function with density functional theory, the electronic transport properties of an (8, 0) carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated. In the current voltage characteristic of the heterojunction, negative differential resistance was found under positive and negative bias, which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage. These results are meaningful to modeling and simulating on related electronic devices.
- PACS
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Subjects
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Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
- Dates
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Issue 4 (April 2011)
Received 24 October 2010, in final form 10 November 2010
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Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction
Song Jiuxu (宋久旭) et al 2011 J. Semicond. 32 042003
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