Huang She-Song et al 2008 Chinese Phys. B 17 323 doi:10.1088/1674-1056/17/1/057
Huang She-Song1, Niu Zhi-Chuan1, Zhan Feng2, Ni Hai-Qiao1, Zhao Huan1, Wu Dong-Hai1 and Sun Zheng1
Show affiliationsWe develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (~5.9×1010 cm−2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.
68.65.Hb Quantum dots (patterned in quantum wells)
Condensed matter: electrical, magnetic and optical
Issue 1 (January 2008)
Received 10 April 2007, in final form 4 July 2007
Huang She-Song et al 2008 Chinese Phys. B 17 323
Vl.V. Bobkov et al 2006 Nucl. Fusion 46 S469
Cheng Rong Li and Tsin Chi Yang 1991 J. Phys. D: Appl. Phys. 24 48
J A Blanco and J Pisonero 1999 Eur. J. Phys. 20 289
Andrés Mujica and R J Needs 1996 J. Phys.: Condens. Matter 8 L237
Richard H Bayford and Alex Hartov 2009 Physiol. Meas. 30
Kurt Bryan and Lester Caudill 2005 Inverse Problems 21 239
Myrlene Gee and Stuart G Whittington 1997 J. Phys. A: Math. Gen. 30 L1
Mark C Peterman et al 2003 J. Micromech. Microeng. 13 380
A K Bandyopadhyay and Douglas A Olson 2006 Metrologia 43 573