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Spin current, spin accumulation and spin Hall effect*

REVIEW ARTICLE

Saburo Takahashi1,2 and Sadamichi Maekawa1,2,3

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TOPICAL REVIEW

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.


Footnote
*  Invited paper
PACS

72.25.Hg Electrical injection of spin polarized carriers

75.50.Tt Fine-particle systems; nanocrystalline materials

71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

85.35.-p Nanoelectronic devices

Subjects

Electronics and devices

Condensed matter: electrical, magnetic and optical

Nanoscale science and low-D systems

Dates

Issue 1 (January–March 2008)

Received 20 September 2007, accepted for publication 10 December 2007

Published 19 March 2008



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