Metal-assisted chemical etching using sputtered gold: a simple route to black silicon

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Published 7 July 2011 2011 National Institute for Materials Science
, , Citation Agnieszka Kurek and Seán T Barry 2011 Sci. Technol. Adv. Mater. 12 045001 DOI 10.1088/1468-6996/12/4/045001

1468-6996/12/4/045001

Abstract

We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.

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10.1088/1468-6996/12/4/045001