Quick search Find article
Quick search
Find article

Generation of a phase-flipped Gaussian mode for optical measurements

V Delaubert, D A Shaddock, P K Lam, B C Buchler, H-A Bachor and D E McClelland

Show affiliations


We propose optical techniques for the generation of a TEM00 Gaussian beam which has a π phase flip in the electric field amplitudes between the two halves of the beam profile. The methods make use of a special waveplate and a masked Sagnac interferometer. The produced phase-flipped mode is the ideal light mode for optical measurements requiring high precision in one spatial dimension. Two examples of such applications are discussed.


PACS

07.60.Ly Interferometers

42.55.Rz Doped-insulator lasers and other solid state lasers

42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

42.60.Lh Efficiency, stability, gain, and other operational parameters

06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)

Subjects

Instrumentation and measurement

Optics, quantum optics and lasers

Dates

Issue 4 (July 2002)

Received 9 August 2001, in final form 15 March 2002

Published 23 May 2002



  1. Generation of a phase-flipped Gaussian mode for optical measurements

    V Delaubert et al 2002 J. Opt. A: Pure Appl. Opt. 4 393

  2. The risk of surprise in energy technology costs

    Nathan E Hultman and Jonathan G Koomey 2007 Environ. Res. Lett. 2 034002

  3. Shape memory alloy clamping devices of a capsule for monitoring tasks in the gastrointestinal tract

    A Menciassi et al 2005 J. Micromech. Microeng. 15 2045

  4. Topological aspects of the quantum Hall effect

    Y Hatsugai 1997 J. Phys.: Condens. Matter 9 2507

  5. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    S Bietti et al 2009 IOP Conf. Ser.: Mater. Sci. Eng. 6 012009

  6. The Berry phase for spin in the Majorana representation

    J H Hannay 1998 J. Phys. A: Math. Gen. 31 L53

  7. Multi-peakons and a theorem of Stieltjes

    R Beals et al 1999 Inverse Problems 15 L1

  8. Electronic structure based on the local atomic environment for tight-binding bands

    R Haydock et al 1972 J. Phys. C: Solid State Phys. 5 2845

  9. Electronic structure based on the local atomic environment for tight-binding bands. II

    R Haydock et al 1975 J. Phys. C: Solid State Phys. 8 2591

  10. Self-assembled crystalline semiconductor optoelectronics on glass and plastic

    E Saeedi et al 2008 J. Micromech. Microeng. 18 075019

View by subject




Export








Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.