S Yamacli and M Avci 2010 Phys. Scr. 82 045705 doi:10.1088/0031-8949/82/04/045705
S Yamacli1 and M Avci2
Show affiliationsIn this paper, a method to obtain the quantum capacitance of carbon nanotubes (CNTs) using ab initio simulations is presented. As an example of the usage of the proposed method, the quantum capacitance of a metallic (6,6) CNT section is calculated. The quantum capacitance is extracted for various bias voltages applied to metallic CNT interconnects in the range 0–2.5 V, which is the operating voltage range of VLSI circuits. The obtained quantum capacitance values are found to be in good agreement with the experimental values. The average Fermi velocity of electrons dependent on the bias voltage is also obtained and plotted.
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Tx Fullerenes and related materials; intercalation compounds
Issue 4 (October 2010)
Received 18 April 2010, accepted for publication 26 August 2010
Published 29 September 2010
S Yamacli and M Avci 2010 Phys. Scr. 82 045705
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