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Excitation of Holes in InP by Infrared Femtosecond Pulses

A Dargys

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Intervalence band dynamics of free holes in infrared fields is studied. A realistic valence band structure is used to simulate simultaneous excitation of split-off, heavy- and light-mass bands by femtosecond duration pulses. The decoherence due to phonon and ionized impurity scattering is taken into account in a quantum-mechanical density matrix. The excitation patterns in the Brillouin zone and hole distribution dynamics are presented. It is shown that it is possible to obtain high excitation levels in the valence band and dynamical inversion even in presence of dissipation, if femtosecond pulses are properly tailored.


PACS

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

72.80.Ey III-V and II-VI semiconductors

71.20.Nr Semiconductor compounds

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 6 (2003)

Received 23 April 2002, revised 22 January 2003, accepted for publication 30 January 2003



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