M Furis et al 2007 New J. Phys. 9 347 doi:10.1088/1367-2630/9/9/347
Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
Focus on Spintronics in Reduced DimensionsM Furis1,5, D L Smith2, S Kos2,6, E S Garlid3, K S M Reddy4, C J Palmstrøm4, P A Crowell3 and S A Crooker1,7
Show affiliationsPart of Focus on Spintronics in Reduced Dimensions
In electron-doped GaAs, we use scanning Kerr-rotation microscopy to locally probe and spatially resolve the depolarization of electron spin distributions by transverse magnetic fields. The shape of these local Hanle-effect curves provides a measure of the spin lifetime as well as spin transport parameters including drift velocity, mobility and diffusion length. Asymmetries in the local Hanle data can be used to reveal and map out the effective magnetic fields due to spin–orbit coupling. Finally, using both spin imaging and local Hanle effect studies, we investigate the drift and diffusion of electrically-injected spins in lateral Fe/GaAs spin-detection devices, both within and outside the current path.
- PACS
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- Dates
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Issue 9 (September 2007)
Received 16 May 2007
Published 28 September 2007
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Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
M Furis et al 2007 New J. Phys. 9 347
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