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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Spin injection in quantum wells with spatially dependent rashba interaction

Focus on Spintronics in Reduced Dimensions

Arne Brataas1,2, A G Mal'shukov1,3 and Yaroslav Tserkovnyak1,4

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Part of Focus on Spintronics in Reduced Dimensions

We consider Rashba spin–orbit effects on spin transport driven by an electric field in semiconductor quantum wells. We derive spin diffusion equations that are valid when the mean free path and the Rashba spin–orbit interaction vary on length scales larger than the mean free path in the weak spin–orbit coupling limit. From these general diffusion equations, we derive boundary conditions between regions of different spin–orbit couplings. We show that spin injection is feasible when the electric field is perpendicular to the boundary between two regions. When the electric field is parallel to the boundary, spin injection only occurs when the mean free path changes within the boundary, in agreement with the recent work by Tserkovnyak et al (Preprint cond-mat/0610190).


PACS

71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

72.25.Dc Spin polarized transport in semiconductors

73.21.Fg Quantum wells

73.63.Hs Quantum wells

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 9 (September 2007)

Received 23 April 2007

Published 28 September 2007



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