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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Excitation dependence of photoluminescence in silicon quantum dots

Xiaoming Wen1,3, Lap Van Dao1, Peter Hannaford1, Eun-Chel Cho2, Young H Cho2 and Martin A Green2

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We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron–hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron–hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide.


PACS

78.67.Hc Quantum dots

73.63.Kv Quantum dots

63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

78.55.Ap Elemental semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 9 (September 2007)

Received 1 June 2007

Published 20 September 2007



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