M K Rabinal and B G Mulimani 2007 New J. Phys. 9 440 doi:10.1088/1367-2630/9/12/440
Transport properties of molecularly stabilized porous silicon schottky junctions
M K Rabinal1 and B G Mulimani2
Show affiliations1-Dodecyne organic molecules (OMs) were chemically bonded to porous silicon (PS) to constitute Si–PS–OMs–metal (M) junctions. PS, which is highly susceptible to atmospheric contamination, becomes stable upon chemical passivation of its surface atoms. Current–voltage curves were studied to understand the charge transport properties, and these measurements indicate clearly that organic passivation unpins the Fermi-level at the PS–M interface. It was believed earlier that Si–PS is the only important interface that controls charge transport in these junctions. We observe that both PS–M and Si–PS interfaces are equally important in influencing the junction parameters when surface states are passivated. The results are discussed in terms of energy band diagrams of these junctions.
- PACS
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
- Subjects
- Dates
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Issue 12 (December 2007)
Received 25 September 2007
Published 12 December 2007
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Transport properties of molecularly stabilized porous silicon schottky junctions
M K Rabinal and B G Mulimani 2007 New J. Phys. 9 440
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