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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Symmetry breaking in few layer graphene films

Focus on Advances in Surface and Interface Science

Aaron Bostwick1, Taisuke Ohta1,2, Jessica L McChesney1,3, Konstantin V Emtsev4, Thomas Seyller4, Karsten Horn2 and Eli Rotenberg1,5

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Part of Focus on Advances in Surface and Interface Science

Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this paper we review these findings, and present detailed methodology for extracting such parameters from ARPES. We also present detailed arguments against the possibility of an energy gap at the Dirac crossing ED.


PACS

79.60.Dp Adsorbed layers and thin films

63.20.K- Phonon interactions

68.55.A- Nucleation and growth

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 10 (October 2007)

Received 22 May 2007

Published 31 October 2007



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