G Savini et al 2007 New J. Phys. 9 6 doi:10.1088/1367-2630/9/1/006
Electrical activity and migration of 90° partial dislocations in SiC
G Savini1,4, M I Heggie1, S Öberg2 and P R Briddon3
Show affiliationsSiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations.
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Issue 1 (January 2007)
Received 12 September 2006
Published 17 January 2007
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Electrical activity and migration of 90° partial dislocations in SiC
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