V Yazdanpanah et al 2006 New J. Phys. 8 233 doi:10.1088/1367-2630/8/10/233
V Yazdanpanah, Zh M Wang, J H Lee and G J Salamo
Show affiliationsStrain relaxation mechanisms for the growth of m-layers of In0.18Ga0.82As/GaAs on a GaAs(100) substrate, tilted 2° towards the [0–11] direction, have been studied by molecular beam epitaxy (MBE) and atomic force microscopy (AFM). While dislocations alone provide a strain relaxation mechanism for nominal GaAs(100), additional strain relaxation mechanisms were observed for a vicinal GaAs(100) substrate. For m ≤ 8, step bunching provided a mechanism for strain relaxation. For m ≥10, in addition to the step bunching, bunched corners along two [051] and [0–1–5] directions provided the mechanism for strain relaxation. These surface patterns provide potential to act as a template for the growth of more uniform and organized nanostructures. For m = 16, the formation of dislocations provided an additional route for strain relaxation.
68.35.B- Structure of clean surfaces (and surface reconstruction)
Surfaces, interfaces and thin films
Issue 10 (October 2006)
Received 28 June 2006
Published 12 October 2006
V Yazdanpanah et al 2006 New J. Phys. 8 233
L G Moretto and R P Schmitt 1981 Rep. Prog. Phys. 44 533
C H Sim 2007 Metrologia 44 29
T A Kaplan and S D Mahanti 1979 J. Phys. C: Solid State Phys. 12 L23
A Hasumi et al 1979 J. Phys. A: Math. Gen. 12 L217
F I Cooperstock et al 1997 Class. Quantum Grav. 14 2195
U Engberg et al 1993 J. Phys.: Condens. Matter 5 5543
Klaus Kroy and Jens Glaser 2007 New J. Phys. 9 416
H Lichtenberg et al 2009 J. Phys.: Conf. Ser. 190 012203
Eihab M Abdel-Rahman and Ali H Nayfeh 2003 J. Micromech. Microeng. 13 491