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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Structural evolution in strained In0.18Ga0.82As stacking multilayers on vicinal GaAs surfaces

V Yazdanpanah, Zh M Wang, J H Lee and G J Salamo

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Strain relaxation mechanisms for the growth of m-layers of In0.18Ga0.82As/GaAs on a GaAs(100) substrate, tilted 2° towards the [0–11] direction, have been studied by molecular beam epitaxy (MBE) and atomic force microscopy (AFM). While dislocations alone provide a strain relaxation mechanism for nominal GaAs(100), additional strain relaxation mechanisms were observed for a vicinal GaAs(100) substrate. For m ≤ 8, step bunching provided a mechanism for strain relaxation. For m ≥10, in addition to the step bunching, bunched corners along two [051] and [0–1–5] directions provided the mechanism for strain relaxation. These surface patterns provide potential to act as a template for the growth of more uniform and organized nanostructures. For m = 16, the formation of dislocations provided an additional route for strain relaxation.


PACS

68.65.Ac Multilayers

61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

68.35.B- Structure of clean surfaces (and surface reconstruction)

68.47.Fg Semiconductor surfaces

Subjects

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Nanoscale science and low-D systems

Dates

Issue 10 (October 2006)

Received 28 June 2006

Published 12 October 2006



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