Fernando D Stefani et al 2005 New J. Phys. 7 197 doi:10.1088/1367-2630/7/1/197
Memory in quantum-dot photoluminescence blinking
Fernando D Stefani1, Xinhua Zhong2, Wolfgang Knoll1, Mingyong Han2 and Maximilian Kreiter1,3
Show affiliationsWe demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (~40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking.
- PACS
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68.65.Hb Quantum dots (patterned in quantum wells)
- Subjects
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Condensed matter: electrical, magnetic and optical
- Dates
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Issue 1 (September 2005)
Received 31 March 2005
Published 19 September 2005
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Memory in quantum-dot photoluminescence blinking
Fernando D Stefani et al 2005 New J. Phys. 7 197
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