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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination

Focus on Photoemission and Electronic Structure

Reiner Rudolph1, Christian Pettenkofer1, Aaron A Bostwick2,5, Jonathan A Adams2,6, Fumio Ohuchi3, Marjorie A Olmstead2, Bengt Jaeckel4, Andreas Klein4 and Wolfram Jaegermann4

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Part of Focus on Photoemission and Electronic Structure

The electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination has been determined by angle-resolved photoelectron spectro- scopy using photons in the energy range hν = 12–170 eV supplied by the BESSY and ALS synchrotron light sources. The Si(1 1 1):GaSe surface is isoelectronic to the passivated Si(1 1 1):H and Si(1 1 1):As surfaces, and also reflects the principal building block of layered chalcogenide GaSe single crystals. The electronic structure is discussed in relation to these systems. The chemical bond between the Si and Ga surface atoms is non-polar and therefore similar to the Ga–Ga bond in GaSe single crystals and also to the Si–Si bond in bulk silicon. This explains both the absence of a surface core-level shift in Si 2p photoelectron spectra of the terminated surface and the striking similarity between its observed band structure and that of bulk GaSe.


PACS

73.20.At Surface states, band structure, electron density of states

68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

79.60.Bm Clean metal, semiconductor, and insulator surfaces

68.47.Fg Semiconductor surfaces

71.20.Nr Semiconductor compounds

71.15.-m Methods of electronic structure calculations

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 1 (April 2005)

Received 14 January 2004

Published 29 April 2005



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