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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging

U Bangert1, A J Harvey1, R Jones2, C J Fall2, A T Blumenau2,3, R Briddon4, M Schreck5 and F Hörmann5

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Electronic band gap states connected with individual dislocations in diamond and GaN are revealed, using highly spatially resolved electron energy loss (EEL) spectrum mapping. Comparison with calculations of low EEL spectra from first-principle methods allows the identification of the joint density of states of different dislocation core types. Also presented is evidence for instances where point defects/impurities have accumulated in the strain field or segregated to the core of dislocations.


PACS

61.72.J- Point defects and defect clusters

79.20.Uv Electron energy loss spectroscopy

61.72.uj III–V and II–VI semiconductors

61.72.Mm Grain and twin boundaries

61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

71.20.Nr Semiconductor compounds

61.72.Nn Stacking faults and other planar or extended defects

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (November 2004)

Received 15 September 2004

Published 30 November 2004



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