U Bangert et al 2004 New J. Phys. 6 184 doi:10.1088/1367-2630/6/1/184
U Bangert1, A J Harvey1, R Jones2, C J Fall2, A T Blumenau2,3, R Briddon4, M Schreck5 and F Hörmann5
Show affiliationsElectronic band gap states connected with individual dislocations in diamond and GaN are revealed, using highly spatially resolved electron energy loss (EEL) spectrum mapping. Comparison with calculations of low EEL spectra from first-principle methods allows the identification of the joint density of states of different dislocation core types. Also presented is evidence for instances where point defects/impurities have accumulated in the strain field or segregated to the core of dislocations.
61.72.J- Point defects and defect clusters
79.20.Uv Electron energy loss spectroscopy
61.72.uj III–V and II–VI semiconductors
61.72.Mm Grain and twin boundaries
71.20.Nr Semiconductor compounds
61.72.Nn Stacking faults and other planar or extended defects
Issue 1 (November 2004)
Received 15 September 2004
Published 30 November 2004
U Bangert et al 2004 New J. Phys. 6 184
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