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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Metamaterial-inspired perfect tunnelling in semiconductor heterostructures

L Jelinek1,5, J D Baena2, J Voves3 and R Marques4

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In this paper, we use a formal analogy of the electromagnetic wave equation and the Schrödinger equation in order to study the phenomenon of perfect tunnelling (tunnelling with unitary transmittance) in a one-dimensional semiconductor heterostructure. Using the Kane model of a semiconductor, we show that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can pave the way toward interesting applications in which metamaterial ideas are transferred into the semiconductor domain.


PACS

41.20.Jb Electromagnetic wave propagation; radiowave propagation

03.65.Ge Solutions of wave equations: bound states

73.40.Gk Tunneling

73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Subjects

Accelerators, beams and electromagnetism

Semiconductors

Surfaces, interfaces and thin films

Quantum information and quantum mechanics

Dates

Issue 8 (August 2011)

Received 30 March 2011

Published 12 August 2011



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