Abstract
The inhibition in wave propagation at band gap energies plays a central role in many areas of technology such as electronics (electron gaps), nanophotonics (light gaps) and phononics (acoustic gaps), among others. Here we demonstrate that metal surfaces featuring free-electron-like bands may become semiconducting by periodic nanostructuration. We combine scanning tunneling spectroscopy and angle-resolved photoemisssion to accurately determine the energy-dependent local density of states and band structure of the Ag/Cu(111) noble metal interface patterned with an array of triangular dislocations, demonstrating the existence of a 25 meV band gap that extends over the entire surface Brillouin zone. We prove that this gap is a general consequence of symmetry reduction in close-packed metallic overlayers; in particular, we show that the gap opening is due to the symmetry lowering of the wave vector group at the K point from C3v to C3.
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