Daoxin Dai et al 2009 New J. Phys. 11 125016 doi:10.1088/1367-2630/11/12/125016
Hybrid silicon lasers for optical interconnects
Focus on Advanced Semiconductor Heterostructures for OptoelectronicsDaoxin Dai1, Alexander Fang and John E Bowers1
Show affiliationsPart of Focus on Advanced Semiconductor Heterostructures for Optoelectronics
We propose high-speed modulation of hybrid silicon lasers through modulation of the photon lifetime τp. Two structures are presented to achieve τp-modulation by modifying the distributed loss or the feedback coefficient of the laser cavity. By using small-signal modeling and the finite-difference method, the responses in the frequency and time domains are given. It is shown that it is possible to achieve a 3 dB bandwidth of over 100 GHz and a high data transmission rate of more than 50 GHz. The theoretical analysis also shows that the chirp due to the variations of the carrier densities in the gain/modulation sections is very small.
- PACS
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
- Subjects
- Dates
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Issue 12 (December 2009)
Received 10 June 2009
Published 17 December 2009
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Hybrid silicon lasers for optical interconnects
Daoxin Dai et al 2009 New J. Phys. 11 125016
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