I Vurgaftman et al 2009 New J. Phys. 11 125015 doi:10.1088/1367-2630/11/12/125015
Mid-infrared interband cascade lasers operating at ambient temperatures
Focus on Advanced Semiconductor Heterostructures for OptoelectronicsI Vurgaftman, C L Canedy, C S Kim, M Kim, W W Bewley, J R Lindle, J Abell and J R Meyer
Show affiliationsPart of Focus on Advanced Semiconductor Heterostructures for Optoelectronics
We discuss the state-of-the-art performance of interband cascade lasers emitting in the 3–5 μm spectral band. Broad-area devices with five active stages display pulsed threshold current densities as low as 400 A cm−2 at room temperature. Auger decay rates are extracted from the analysis of threshold current densities and differential slope efficiencies of nearly 30 lasers, and found to be significantly lower than was anticipated based on prior information. New designs also produce ICLs with room-temperature internal losses as low as ≈6 cm−1. The combination of these advances with improvements to the processing of narrow ridges has led to the fabrication of a 4.4-μm-wide ridge emitting at 3.7 μm that lased to 335 K in continuous mode. This is the highest continuous-wave (cw) operating temperature for any semiconductor laser in the 3.0–4.6 μm spectral range. A 10-μm-wide ridge with high-reflection and anti-reflection facet coatings produced up to 59 mW of cw power at 298 K, and displayed a maximum wall-plug efficiency of 3.4%.
- PACS
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
- Subjects
- Dates
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Issue 12 (December 2009)
Received 30 June 2009
Published 17 December 2009
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Mid-infrared interband cascade lasers operating at ambient temperatures
I Vurgaftman et al 2009 New J. Phys. 11 125015
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