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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Self-sustained spin-polarized current oscillations in multiquantum well structures

Ramón Escobedo1,5, Manuel Carretero2,3, Luis L Bonilla2,3 and Gloria Platero4

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Nonlinear transport through diluted magnetic semiconductor nanostructures is investigated. We have considered a II–VI multiquantum well nanostructure whose wells are selectively doped with Mn. The response to a dc voltage bias may be either a stationary or an oscillatory current. We have studied the transition from stationary to time-dependent current as a function of the doping density and the number of quantum wells. Analysis and numerical solution of a nonlinear spin transport model shows that the current in a structure without magnetic impurities is stationary, whereas current oscillations may appear if at least one well contains magnetic impurities. For long structures having two wells with magnetic impurities, a detailed analysis of nucleation of charge dipole domains shows that self-sustained current oscillations are caused by repeated triggering of dipole domains at the magnetic wells and motion towards the collector. Depending on the location of the magnetic wells and the voltage, dipole domains may be triggered at both wells or at only one. In the latter case, the well closer to the collector may inhibit domain motion between the first and the second well inside the structure. Our study could allow design of oscillatory spin-polarized current injectors.


PACS

72.25.Mk Spin transport through interfaces

73.63.Hs Quantum wells

75.30.Hx Magnetic impurity interactions

75.50.Pp Magnetic semiconductors

75.50.Tt Fine-particle systems; nanocrystalline materials

72.25.Dc Spin polarized transport in semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 1 (January 2009)

Received 20 May 2008

Published 20 January 2009



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