K Dohnalová et al 2008 New J. Phys. 10 063014 doi:10.1088/1367-2630/10/6/063014
K Dohnalová1,2,5, I Pelant1, K Kůsová1, P Gilliot2, M Gallart2, O Crégut2, J-L Rehspringer2, B Hönerlage2, T Ostatnický3 and S Bakardjeva4
Show affiliationsSilicon nanocrystals (Si-ncs) of sufficiently small size, emitting luminescence at short wavelengths (which implies the occurrence of quasi-direct radiative recombination) and being densely packed in a planar thin film (which ensures short stimulated emission (StE) lifetime) can become a suitable active material for the observation of StE in the visible region. In this paper, we describe a fabrication method of nanostructures of this type, based on enhanced electrochemical etching of silicon wafers followed by embedding porous silicon grains into an SiO2 matrix. Further, we report on time-resolved photoluminescence spectra and optical gain measurements performed via the variable-stripe-length and the shifting-excitation-spot methods. Finally, we realize a transient wavelength-tunable distributed-feedback-laser (DFL) cavity with inserted densely packed Si-ncs as an active medium. We demonstrate an increase in emission intensity on the blue emission wing (below 600 nm), which is spectrally shifting in accordance with the cavity tuning. We also present a mathematical model of the DFL cavity enabling us to simulate the experimental observations and analyze a realistic prospect for achieving laser action in an ensemble of Si-ncs.
78.67.Bf Nanocrystals and nanoparticles
81.65.Cf Surface cleaning, etching, patterning
81.07.Bc Nanocrystalline materials
Condensed matter: electrical, magnetic and optical
Issue 6 (June 2008)
Received 25 March 2008
Published 12 June 2008
K Dohnalová et al 2008 New J. Phys. 10 063014
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