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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Closely packed luminescent silicon nanocrystals in a distributed-feedback laser cavity

K Dohnalová1,2,5, I Pelant1, K Kůsová1, P Gilliot2, M Gallart2, O Crégut2, J-L Rehspringer2, B Hönerlage2, T Ostatnický3 and S Bakardjeva4

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Silicon nanocrystals (Si-ncs) of sufficiently small size, emitting luminescence at short wavelengths (which implies the occurrence of quasi-direct radiative recombination) and being densely packed in a planar thin film (which ensures short stimulated emission (StE) lifetime) can become a suitable active material for the observation of StE in the visible region. In this paper, we describe a fabrication method of nanostructures of this type, based on enhanced electrochemical etching of silicon wafers followed by embedding porous silicon grains into an SiO2 matrix. Further, we report on time-resolved photoluminescence spectra and optical gain measurements performed via the variable-stripe-length and the shifting-excitation-spot methods. Finally, we realize a transient wavelength-tunable distributed-feedback-laser (DFL) cavity with inserted densely packed Si-ncs as an active medium. We demonstrate an increase in emission intensity on the blue emission wing (below 600 nm), which is spectrally shifting in accordance with the cavity tuning. We also present a mathematical model of the DFL cavity enabling us to simulate the experimental observations and analyze a realistic prospect for achieving laser action in an ensemble of Si-ncs.


PACS

78.67.Bf Nanocrystals and nanoparticles

81.65.Cf Surface cleaning, etching, patterning

78.45.+h Stimulated emission

81.07.Bc Nanocrystalline materials

78.55.Ap Elemental semiconductors

81.16.-c Methods of nanofabrication and processing

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 6 (June 2008)

Received 25 March 2008

Published 12 June 2008



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