Adrian Keller et al 2008 New J. Phys. 10 063004 doi:10.1088/1367-2630/10/6/063004
Minimization of topological defects in ion-induced ripple patterns on silicon
Adrian Keller1, Stefan Facsko and Wolfhard Möller
Show affiliationsThe evolution of self-organized nanoscale ripple patterns induced by low-energy ion sputtering of silicon is investigated. The quality of the patterns is monitored by calculating a normalized density of topological defects from atomic force microscopy images. A strong dependence of the normalized defect density on the applied ion fluence is observed with a well-pronounced minimum at intermediate fluences. Simulations using the damped Kuramoto–Sivashinsky equation yield good agreement with the experiments and are further used to study the dynamics of single pattern defects.
- PACS
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68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
68.37.Ps Atomic force microscopy (AFM)
68.35.Dv Composition, segregation; defects and impurities
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
- Subjects
- Dates
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Issue 6 (June 2008)
Received 4 March 2008
Published 4 June 2008
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Minimization of topological defects in ion-induced ripple patterns on silicon
Adrian Keller et al 2008 New J. Phys. 10 063004
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