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Deutsche Physikalische Gessellschaft IOP Institute of Physics

Structural impact of Mn implantation on ZnO

M Schumm1,5, M Koerdel1, S Müller2, H Zutz2, C Ronning3, J Stehr4, D M Hofmann4 and J Geurts1

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We present a systematic analysis of the structural properties of Mn implanted ZnO by Raman scattering and complementary methods in the Mn composition range 0.2–8 at.% (relative to Zn) with an implantation step profile of about 300 nm depth. Mn ions are substitutionally incorporated on Zn sites in the ZnO wurtzite lattice and no secondary phases are detected. Beside the common eigenmodes of the ZnO host lattice, we observe additional modes related to the Mn implantation, which are studied for different Mn concentrations and annealing procedures. We distinguish between implantation damage and impurity induced disorder, and also show that the spectral feature which is often assigned to a Mn local vibrational mode (LVM) in ZnO consists of two separate modes. We present evidence that only one of these features is a candidate for a LVM.


PACS

61.72.uj III–V and II–VI semiconductors

78.30.Fs III-V and II-VI semiconductors

61.72.S- Impurities in crystals

76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)

78.20.Ls Magnetooptical effects

75.50.Pp Magnetic semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 4 (April 2008)

Received 18 December 2007

Published 4 April 2008



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