The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. The journal publishes articles dealing with the applications of physical principles as well as articles concerning the understanding of physics that have particular applications in mind. It is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
This publication is partially supported by a Grant-in-Aid for Publication of Scientific Research Results from the Japan Society for the Promotion of Science.
Number 11, November 2015 (110301-118004)
Number 12, December 2015 (120101-128003)
Number 1S, January 2016 (01AA01-01AH06)
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In the last 30 days
Shintaro Sato 2015 Jpn. J. Appl. Phys. 54 040102
Graphene is a two-dimensional material with a one-atom-thick layer of carbon. Since the first report of the excellent electrical properties of graphene in 2004, its unique physical properties have been attracting attention and research on the application of graphene to electronic and photonic devices has been intensively carried out. In this review, recent research trends in the application of graphene to electronic devices, particularly transistors and interconnects, and graphene formation techniques are examined. In addition, the technical issues to be addressed for its application to electronic devices and the prospects for future graphene devices are discussed.
Ibraheem Almansouri et al 2015 Jpn. J. Appl. Phys. 54 08KD04
Theoretical calculation based on detailed balance and incorporating different realistic optical and electrical losses predicts conversion efficiency beyond 22% for single-junction perovskite devices. In dual-junction perovskite/silicon devices, theoretical conversion efficiency around 40% is been determined. However, dramatic drop in the conversion efficiency is shown to be due to the glass reflection and FTO parasitic absorption losses. Additionally, practical conversion efficiency limits of dual-junction two-terminal perovskite/silicon tandem solar cell of 30% are achievable as reported in this work using state-of-the-art demonstrated devices. Additionally, various crystalline silicon (industry and laboratory demonstrated) technologies are used as the bottom cell for the current matched tandem cell stacks with higher relative improvements when using commercial c-Si solar cells. Moreover, the effect of eliminating the parasitic resistances and enhancing the external radiative efficiency (ERE) in the perovskite junction on tandem performance are also investigated enhancing the stack efficiencies.
Kazuhito Hashimoto et al 2005 Jpn. J. Appl. Phys. 44 8269
Photocatalysis has recently become a common word and various products using photocatalytic functions have been commercialized. Among many candidates for photocatalysts, TiO 2 is almost the only material suitable for industrial use at present and also probably in the future. This is because TiO 2 has the most efficient photoactivity, the highest stability and the lowest cost. More significantly, it has been used as a white pigment from ancient times, and thus, its safety to humans and the environment is guaranteed by history. There are two types of photochemical reaction proceeding on a TiO 2 surface when irradiated with ultraviolet light. One includes the photo-induced redox reactions of adsorbed substances, and the other is the photo-induced hydrophilic conversion of TiO 2 itself. The former type has been known since the early part of the 20th century, but the latter was found only at the end of the century. The combination of these two functions has opened up various novel applications of TiO 2, particularly in the field of building materials. Here, we review the progress of the scientific research on TiO 2 photocatalysis as well as its industrial applications, and describe future prospects of this field mainly based on the present authors' work.
Shizuo Fujita 2015 Jpn. J. Appl. Phys. 54 030101
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their “full bloom”.
Chihaya Adachi 2014 Jpn. J. Appl. Phys. 53 060101
Currently, organic light-emitting diodes (OLEDs) have reached the stage of commercialization, and there are intense efforts to use them in various applications from small- and medium-sized mobile devices to illumination equipment and large TV screens. In particular, phosphorescent materials have become core OLED materials as alternatives to the conventionally used fluorescent materials because devices made with phosphorescent materials exhibit excellent light-emitting performance. However, phosphorescent materials have several problems, such as their structure being limited to organic metal compounds containing rare metals, for example, Ir, Pt, and Os, and difficulty in realizing stable blue light emission, so the development of new materials is necessary. In this article, I will review next-generation OLEDs using a new light-emitting mechanism called thermally activated delayed fluorescence (TADF). Highly efficient TADF, which was difficult to realize with conventional technologies, has been achieved by optimizing molecular structures. This has led to the realization of ultimate next-generation OLEDs that are made of common organic compounds and can convert electricity to light at an internal quantum efficiency of nearly 100%.
Shuji Nakamura 1991 Jpn. J. Appl. Phys. 30 L1705
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×10 16/cm 3 and 600 cm 2/V·s, respectively, at room temperature. The values became 8×10 15/cm 3 and 1500 cm 2/V·s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 Å.
Kenji Hamada et al 2015 Jpn. J. Appl. Phys. 54 04DP07
We have successfully developed 4H-SiC devices including metal–oxide–semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as that of the Si-insulated gate bipolar transistor (IGBT) by the n-type doping of the junction field-effect transistor region (JFET doping). The JFET doping technique is effective in reducing the temperature coefficient of resistance in the JFET region, leading to the decreased on-resistance of the SiC-MOSFET at high temperatures. These devices have been applied to 3.3 kV/1500 A modules for the world’s first all-SiC traction inverter. The switching loss of the new traction inverter system is approximately 55% less than that of a conventional inverter system incorporating Si modules.
Hiroshi Amano et al 1989 Jpn. J. Appl. Phys. 28 L2112
Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16cm -3, the hole mobility is ∼8 cm 2/V·s and the resistivity is ∼35 Ω·cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.
Marius Chyasnavichyus et al 2015 Jpn. J. Appl. Phys. 54 08LA02
Probing of micro- and nanoscale mechanical properties of soft materials with atomic force microscopy (AFM) gives essential information about the performance of the nanostructured polymer systems, natural nanocomposites, ultrathin coatings, and cell functioning. AFM provides efficient and is some cases the exclusive way to study these properties nondestructively in controlled environment. Precise force control in AFM methods allows its application to variety of soft materials and can be used to go beyond elastic properties and examine temperature and rate dependent materials response. In this review, we discuss experimental AFM methods currently used in the field of soft nanostructured composites and biomaterials. We discuss advantages and disadvantages of common AFM probing techniques, which allow for both qualitative and quantitative mappings of the elastic modulus of soft materials with nanosacle resolution. We also discuss several advanced techniques for more elaborate measurements of viscoelastic properties of soft materials and experiments on single cells.
Md. Mijanur Rahman et al 2016 Jpn. J. Appl. Phys. 55 01AE09
Zinc oxide (ZnO) nanowires (NWs) are grown on fluorine-doped tin oxide (FTO) glass substrates via a simple reactive evaporation method without the presence of any catalysts or additives. The ZnO NWs show high crystallinity and preferential elongation along the c-axis of the hexagonal wurtzite crystal structure. The highly crystalline NWs as electron transporting layer have been used to fabricate the CH 3NH 3PbI 3 perovskite solar cells and their photovoltaic performance were investigated. In this report, we studied the effect of filtration of PbI 2-solution on surface morphology of CH 3NH 3PbI 3 layer. Spin-coating of the filtered PbI 2-solution leads to a better crystallization and relatively homogenous coverage of the CH 3NH 3PbI 3 film, resulting in an enhancement of the solar cell efficiency compared to the cell fabricated using non-filtrated PbI 2-solution. By synthesizing the CH 3NH 3PbI 3 film using filtrated PbI 2-solution, we achieved the best power conversion efficiency of 4.8% with a current density of 7.6 mA cm −2, the open circuit voltage of 0.79 V and fill factor of 0.63.
This cloud represents the 50 most popular PACS codes from the latest 250 coded articles for this journal. The larger the code the more times it occurs in those 250 articles. Click on a code to link to the articles in that category.
42.55.Px 42.79.Pw 43.35.Yb 43.38.Fx 42.65.Ky 42.40.Eq 43.35.Mr 29.40.Wk 42.15.Eq 41.75.Ak 42.65.Re 52.20.Hv 42.60.Lh 07.57.Kp 42.65.Pc 42.70.Jk 42.30.Va 43.20.Mv 42.70.Ln 52.25.Jm 29.40.Mc 42.79.Vb 42.79.Dj 42.79.Sz 41.75.Fr 42.25.Ja 42.81.Pa 07.07.Df 52.25.Dg 46.40.-f 07.85.Fv 42.40.Ht 05.40.Ca 41.50.+h 52.25.-b 21.60.De 42.70.Ce 42.79.Bh 42.55.Sa 42.70.Mp 42.79.Ci 33.50.Dq 42.70.Km 07.07.Tw 42.30.Sy 07.85.Qe 42.70.Gi 42.25.Hz 06.20.Dk 42.65.Wi