The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. The journal publishes articles dealing with the applications of physical principles as well as articles concerning the understanding of physics that have particular applications in mind. It is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
This publication is partially supported by a Grant-in-Aid for Publication of Scientific Research Results from the Japan Society for the Promotion of Science.
Latest Issue (Complete)
Number 12, December 2014 (120301-128002)
Congratulations to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura on being awarded the 2014 Nobel Prize for Physics. Several of the key papers cited by the Nobel committee were published in this journal - visit the 2014 Nobel collection to read them for free.
From 2014, JJAP will be published by IOP Publishing on behalf of The Japan Society of Applied Physics. All submissions and refereeing will continue to be handled by the JJAP Editorial Office at The Japan Society of Applied Physics. To submit a paper to JJAP, please connect to the editorial website.
JJAP publishes a number of Special Issues each year. These feature research articles presented at major international conferences. These articles are fully peer-reviewed to JJAP's usual acceptance criteria. Fifteen special issues are planned for 2014. Click here for a list of the 2014 Special Issues.
In the last 30 days
Hiroshi Amano et al 1989 Jpn. J. Appl. Phys. 28 L2112
Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16cm -3, the hole mobility is ∼8 cm 2/V·s and the resistivity is ∼35 Ω·cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.
Shuji Nakamura 1991 Jpn. J. Appl. Phys. 30 L1705
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×10 16/cm 3 and 600 cm 2/V·s, respectively, at room temperature. The values became 8×10 15/cm 3 and 1500 cm 2/V·s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 Å.
Shuji Nakamura et al 1991 Jpn. J. Appl. Phys. 30 L1998
High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almost 10 times higher than that of conventional 8-mcd SiC blue LEDs. The forward voltage was as low as 4 V at a forward current of 20 mA. This forward voltage is the lowest ever reported for GaN LEDs. The peak wavelength and the full width at half-maximum (FWHM) of GaN LEDs were 430 nm and 55 nm, respectively.
Zuzanna Liliental-Weber 2014 Jpn. J. Appl. Phys. 53 100205
This paper reviews the various types of structural defects observed by transmission electron microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by high nitrogen pressure solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.
Yoshihiro Ishitani 2014 Jpn. J. Appl. Phys. 53 100204
In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band–band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (±0.06) m 0. An E p value related to the transition matrix element of 10–14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron–phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required.
Shuji Nakamura et al 1996 Jpn. J. Appl. Phys. 35 L74
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm 2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.
Shuji Nakamura et al 1992 Jpn. J. Appl. Phys. 31 L139
Low-resistivity p-type GaN films were obtained by N 2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×10 6 Ω·cm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Ω·cm, 3×10 17/cm 3 and 10 cm 2/V·s, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.
Zenji Yatabe et al 2014 Jpn. J. Appl. Phys. 53 100213
This paper presents a systematic characterization of electronic states at insulators/(Al)GaN interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review important results reported for GaN metal–insulator–semiconductor (MIS) structures. SiO 2 is an attractive material for MIS transistor applications due to its large bandgap and high chemical stability. In-situ SiN x is effective for improving the operation stability of high electron mobility transistors (HEMTs). Meanwhile, Al 2O 3/GaN structures have high band offsets and low interface state densities, which are also desirable for insulated gate applications. We have proposed a calculation method for describing capacitance–voltage ( C– V) characteristics of HEMT MIS structures for evaluating electronic state properties at the insulator/AlGaN interfaces. To evaluate near-midgap states at insulator/AlGaN interfaces, a photo-assisted C– V technique using photon energies less than the bandgap of GaN has been developed. Using the calculation in conjunction with the photo-assisted C– V technique, we estimate interface state density distributions at the Al 2O 3/AlGaN interfaces.
Isamu Akasaki and Hiroshi Amano 2006 Jpn. J. Appl. Phys. 45 9001
Marked improvements in the crystalline quality of GaN enabled the production of GaN-based p–n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we review breakthroughs in the crystal growth and conductivity control of nitride semiconductors during the development of p–n junction blue-light-emitting devices. Recent progress mainly based on the present authors' work and future prospects of nitride semiconductors are also discussed.
Shuji Nakamura et al 1992 Jpn. J. Appl. Phys. 31 1258
Low-resistivity p-type GaN films, which were obtained by N 2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1×10 6 Ω·cm after NH 3-ambient thermal annealing at temperatures above 600°C. In the case of N 2-ambient thermal annealing at temperatures between room temperature and 1000°C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2 Ω·cm and 8 Ω·cm. These results indicate that atomic hydrogen produced by NH 3 dissociation at temperatures above 400°C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
This cloud represents the 50 most popular PACS codes from the latest 250 coded articles for this journal. The larger the code the more times it occurs in those 250 articles. Click on a code to link to the articles in that category.
52.50.Qt 42.55.Px 42.70.Df 47.20.Ib 52.80.Mg 61.50.Ks 41.75.Ak 07.57.Hm 42.65.Re 52.50.Dg 52.50.Sw 61.72.Ff 42.60.Lh 42.40.-i 52.77.Fv 52.25.Jm 52.38.Mf 42.79.Dj 52.80.Wq 52.65.-y 42.25.Gy 42.81.Pa 52.70.Nc 07.07.Df 52.70.Kz 07.85.Fv 43.35.Pt 52.77.Dq 52.77.-j 52.25.-b 33.15.Ta 21.60.De 52.77.Bn 31.15.A- 13.60.Fz 42.55.Sa 52.70.-m 42.79.Gn 42.30.Wb 52.80.Tn 42.79.Wc 52.70.Ds 29.40.-n 42.65.Yj 05.10.Ln 61.72.Mm 61.30.Eb 41.20.-q 52.58.Lq 42.60.Fc