Isotope Effect of Deuterium Microwave Plasmas on the Formation of Atomically Flat (111) Diamond Surfaces

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Published 28 August 2012 Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation Norikazu Mizuochi et al 2012 Jpn. J. Appl. Phys. 51 090106 DOI 10.1143/JJAP.51.090106

1347-4065/51/9R/090106

Abstract

This article describes the positive effect of replacing hydrogen with deuterium on the formation of an atomically flat surface in microwave plasma-assisted chemical vapor deposition (MPCVD) of homoepitaxial (111) diamond. Using atomic force microscopy (AFM) measurements, suppression of the density of surface islands and enlargement of the step-free surface area were identified. Isotope effects promoting preferential etching, which enhances the growth at steps (or kinks) and formation of the atomically flat surface, are discussed with respect to lateral growth.

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10.1143/JJAP.51.090106