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Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier

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Published 21 April 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Pachamuthu Jayavel et al 2005 Jpn. J. Appl. Phys. 44 2528 DOI 10.1143/JJAP.44.2528

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Author affiliations

1 Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan

2 Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

3 Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

Dates

  1. Received 9 September 2004
  2. Accepted 15 November 2004
  3. Published

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1347-4065/44/4S/2528

Abstract

We have investigated cleaved-edge photoluminescence (PL) polarization properties of InAs/GaAs quantum dot (QD) traveling-type semiconductor optical amplifiers (SOAs). Transverse-electric (TE) and transverse magnetic (TM) mode PL intensities of the devices have been examined. TE-mode PL intensity of QD-SOA is observed to be much stronger than TM-mode. The results indicate that the valence band edge of the QDs is heavy-hole like. Temperature dependence on the PL polarization properties of QD-SOA has been carried out and analyzed. It is observed that an enhancement of TM-mode PL intensity of QD-SOA at higher temperature is due to the fact that the inhomogeneous thermal strain induced effect.

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10.1143/JJAP.44.2528