Abstract
The linear-polarization character of photoluminescence (PL) from the cleaved edge surface of columnar InAs/GaAs self-assembled quantum dots (QDs) has been investigated. The columnar QDs were fabricated by closely stacking the Stranski-Krastanov-mode InAs-island layers. Anisotropy of the PL polarization depends on the stacking layer number. The single-island-layer sample shows strong transverse-electric (TE)-mode PL. With increasing stacking layer number, the PL-intensity ratio of TE-mode PL to transverse-magnetic (TM)-mode PL decreases. Then, the TE/TM-mode PL-intensity ratio is inverted beyond the stacking layer number of 9. Our results suggest that a polarization-independent transition can be accomplished by controlling the stacking layer number.