Abstract
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
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Isamu Akasaki1, Hiroshi Amano1, Shigetoshi Sota1, Hiromitsu Sakai1, Toshiyuki Tanaka2 and Masayoshi Koike3
Copyright (c) 1995 The Japan Society of Applied Physics
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Citation Isamu Akasaki et al 1995 Jpn. J. Appl. Phys. 34 L1517
DOI 10.7567/JJAP.34.L1517
2853 Total downloads
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.